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Crystalline Tungsten Powder 15-53µm

Crystalline Tungsten Powder 15-53µm

Crystalline tungsten powder is made by radio frequency plasma spheroidization atomization method, and has the characteristics of high purity and low oxygen, high sphericity, smooth surface, no satellite, uniform particle size distribution, excellent flowability, high loose density and vibration density.

  • Order(MOQ) :

    1 Kg
  • Payment :

    T/T ; L/C at sight
  • Product Origin :

    China
  • Shipping Port :

    Foshan / Guangzhou / Shenzhen
  • Lead Time :

    1-7 days
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Crystalline tungsten powder is an important industrial material, which is mainly used in the following aspects: Cemented carbide production: Crystalline tungsten powder is one of the main raw materials for manufacturing cemented carbide. Cemented carbide is mainly made of metal powders such as tungsten carbide and cobalt. It has extremely high hardness and wear resistance and is widely used in cutting tools, drill bits, abrasives and other fields. Electronic materials: Crystalline tungsten powder also has important applications in the electronics industry, such as being used as electrodes and electron emission materials in the manufacture of electronic components, semiconductor devices and vacuum equipment. High-temperature alloys: Crystalline tungsten powder is also used to manufacture high-temperature alloys. These alloys have excellent high-temperature strength and corrosion resistance and are widely used in aerospace, aerospace engines, chemical equipment and other fields. Optical coatings: Due to the high melting point and good chemical stability of crystalline tungsten powder, it can be used to prepare optical coatings to improve light transmittance and wear resistance. Ceramic materials: Crystalline tungsten powder can also be used to prepare ceramic materials, such as high-temperature ceramics, industrial refractory materials, etc., for industrial applications in high-temperature environments.

 

Chemical composition

Chemical Composition
Element Value (%) Test Method Element Value (%) Test Method
W ≥99.9 / Si <0.001 ICP-AES
Cr <0.01 ICP-AES Fe <0.03 ICP-AES
Other <0.05        
Gas Impurities
Element Value (%) Test Standard Element Value (%) Test Standard
≤0.001 GB/T4324-2012 O ≤0.025 GB/T4324-2012

 

Physical properties

Density (g/cm3)  Hall Flow Rate (s/50g)
Apparent Density Tap Density Test Standard Value Test Standard
≥7.53 ≥8.21 GB/T 1479-1984
GB/T 5162-2006
≤20 GB/T 1482-2010

 

 

 

 

 

 

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